离子束合成钇硅化物的结构及红外谱特征

将稀土金属钇离子注入到n型单晶Si(111)中制备出钇硅化物埋层.利用x射线衍射、卢瑟福背散射和傅里叶红外吸收谱测量分析了样品的结构、原子的埋层分布和振动模式.结果表明，Y离子在注入过程中已与基底中的Si原子形成了YSi2结构相.真空下的红外光辐照处理促使YSi2择优取向生长，埋层中Si与Y的平均原子浓度比由24下降为20，与六方YSi2的化学计量比一致.还给出了钇硅化物的特征红外吸收谱.

Structure and infrared absorption characterizations of yttrium silicides formed by ion beam synthesis

Buried hexagonal YSi2 layers were formed using 100 keV yttrium ions to a dose of 1×1018 Y+cm-2 implanted into (111) oriented silicon wafers by a metal vapor vacuum arc ion source. The structure and infrared absorption spectra of the compound layers have been investigated by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and Fourier transform infrared (FT-IR) transmittance spectrometry. It was shown that YSi2 has been directly formed during the implantation. A tendency of preferred growth was found in the following process of infrared irradiation. RBS measurements revealed that, after infrared irradiation, the average atomic density ratio of Si to Y in the buried layers decreases from 24 down to around 20, which is close to the stoichiometry of hexagonal YSi2. The characteristic vibration absorption spectra of the silicides have been obtained by FT-IR transmittance measurements.