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Multilayers as defect barriers |
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| Authors: | R. Hey J. Herzog H. Kostial |
| Abstract: | A multilayer structure consisting of undoped GaAs and AlAs layers was incorporated into a buffer layer on GaAs substrates. This reduces the spreading of impurities from the substrate (e.g. tellurium) into layers deposited on top of the multilayer system as observed by SIMS and C/V profiling. Incorporation coefficients for tellurium in GaAs, AlAs and multilayers were calculated. |
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