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| Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory | |
| 作者姓名： | 张挺 刘波 夏吉林 宋志棠 封松林 陈宝明 |
| 作者单位： | [1]ResearchCenterofFunctionalSemiconductorFilmEngineeringandTechnology,StateKeyLaboratoryofFunctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences [2]SiliconStorageTechnology,Inc.1171SonoraCourt,Sunnyvale,CA94086,USA |
| 摘 要： | Annealing temperature effects on the structure and electrical resistance of Ge2Sb2Te5 thin film were studied. The crystallization and melting temperature of the thin film are about 175℃ and 610℃ respectively. The structure of the as-deposited and the annealed film at different annealing temperatures are identified by the x-ray diffraction |
| 关 键 词： | 电学性质 结构性质 锗锑碲薄膜 双向统一存储器 结晶温度 熔化温度 退火温度 光学记录材料 |
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