| 玻璃衬底上中温制备多晶硅薄膜的量子态现象 |
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| 引用本文： | 靳瑞敏,卢景霄,冯团辉,王海燕,张丽伟.玻璃衬底上中温制备多晶硅薄膜的量子态现象[J].人工晶体学报,2006,35(1):104-106. |
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| 作者姓名： | 靳瑞敏 卢景霄 冯团辉 王海燕 张丽伟 |
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| 作者单位： | 郑州大学材料物理教育部重点实验室,郑州,450052 |
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| 摘 要： | 用PECVD法直接沉积的非晶硅(a-Si:H)薄膜用传统炉在中温退火,然后用拉曼光谱、XRD和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象.分析发现在传统炉中850℃下退火三个小时晶粒大小出现极大值,平均晶粒尺寸为30nm左右.
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| 关 键 词： | PECVD法 非晶硅薄膜 传统炉退火 量子态 晶粒大小 |
| 文章编号： | 1000-985X（2006）01-0104-03 |
| 收稿时间： | 2005-07-24 |
| 修稿时间： | 2005-07-24 |
Quantum State of Poly-Si Films at Middle Temperature on Glass Substrate |
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| JIN Rui-min,LU Jing-xiao,FENG Tuan-hui,WANG Hai-yan,ZHANG Li-wei.Quantum State of Poly-Si Films at Middle Temperature on Glass Substrate[J].Journal of Synthetic Crystals,2006,35(1):104-106. |
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| Authors: | JIN Rui-min LU Jing-xiao FENG Tuan-hui WANG Hai-yan ZHANG Li-wei |
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| Institution: | Key Laboratory of Material Physics of the Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 ,China |
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| Abstract: | Amorphous silicon films prepared by PECVD on the glass substrate have been crystallized by conventional furnace annealing (FA) at middle temperature. From the Raman spectra, X-ray diffraction(XRD) and scanning electronic microscope (SEM), the quantum state in these processions was found and discussed. The crystallized grain size is biggest at 850℃ for 3h by FA. |
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| Keywords: | PECVD a-Si:H film conventional furnace annealing quantum state grain size |
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