Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors |
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Authors: | Ren Fan Hao Zhi-Biao Wang Lei Wang Lai Li Hong-Tao Luo Yi |
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Affiliation: | Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China;State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua U |
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Abstract: | SiN_x is commonly used as a passivation material forAlGaN/GaN high electron mobility transistors (HEMTs). In this paper,the effects of SiN_x passivation film on both two-dimensionalelectron gas characteristics and current collapse of AlGaN/GaN HEMTsare investigated. The SiN_x films are deposited by high- andlow-frequency plasma-enhanced chemical vapour deposition, and theydisplay different strains on the AlGaN/GaN heterostructure, whichcan explain the experiment results. |
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Keywords: | SiNx passivation plasma-enhanced chemical vapourdeposition AlGaN/GaN heterostructure current collapse |
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