Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes |
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| Authors: | Yi-Jung Liu Chih-Hung Yen Chia-Hao Hsu Kuo-Hui Yu Li-Yang Chen Tsung-Han Tsai Wen-Chau Liu |
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| Institution: | 1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, 70101, Republic of China
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| Abstract: | An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated
and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this
mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively. |
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