Potentiometric response of lipid modified ISFET |
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| Authors: | Tetsuo Osa |
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| Institution: | 1. Pharmaceutical Institute, Tohoku University, Aobayama, 980, Sendai, Japan
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| Abstract: | The gate surface of an ion-sensitive field effect transistor (ISFET) was modified with Langmuir-Blodgett (LB) film composed of fatty acid or crown ether amphiphiles to examine their potentiometric response to H+ and K+ ions. The results demonstrate the possible use of the lipid films for preparing ISFET ion sensors. |
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