Bias-dependent generation and quenching of defects in pentacene |
| |
Authors: | Lang D V Chi X Siegrist T Sergent A M Ramirez A P |
| |
Institution: | Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA. |
| |
Abstract: | We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420 nm illumination. The defect gives rise to a hole trap at Ev+0.38 eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67 eV activation energy with a small (10(8) s(-1)) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|