Schottky barrier diode as an infrared low-level detector |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China;2. Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China;3. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510006, China;4. College of Nanoscale Science and Engineering, State University of New York, Albany, NY 12203, United States |
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| Abstract: | If collisions between carriers and the lattice can be neglected for the space charge region of a Schottky barrier diode (thermionic mode of operation) the infrared response of the diode, when operating as a low-level quadratic detector, has been calculated. It is shown that the limitation in the infrared response is not so much in the voltage response of the detector, but is caused by the large input conductance of the device caused by carriers that have insufficient energy to reach the metal contact. |
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