The density of states in the mobility gap of amorphous-silicon films computed by a new analytical method |
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| Authors: | V. Augelli R. Murri L. Schiavulli |
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| Affiliation: | (1) Dipartimento di Fisica dell'Università di Bari Unità Centro Interuniversitario di Struttura della Materia, Gruppo Nazionale di Struttura della Materia, Via Amendola 173, I-70126 Bari, Italia |
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| Abstract: | Summary The field effect technique has been used to measure the density of states in the mobility gap of silicon films. We used a new method to compute the density of states distribution. The method is based on an analytical solution of the Fredholm integral equation, which relates the space charge density to the density of states. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction. |
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| Keywords: | Electronic density of states determinations (including energy states of liquid semiconductors) |
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