Chlorine/silicon surface reactions under heating |
| |
Authors: | Nahomi Aoto Eiji Ikawa Takamaro Kikkawa and Yukinori Kurogi |
| |
Institution: | Microelectronics Research Laboratories, NEC Corporation, 1120 Simokuzawa, Sagamihara, Kanagawa 229, Japan |
| |
Abstract: | Reactions on Cl-adsorbed Si(111) and Si(100) surfaces—(Cl/Si(111) and Cl/Si(100))—under heating in ultrahigh vacuum (UHV) and in a Cl2 atmosphere were studied. Auger electron spectroscopy (AES) and low-energy electron energy loss spectroscopy (LEELS) were used for examination of surface changes. Heating in UHV at 820°C for 30 s successfully removed almost all Cl atoms, both on Cl/Si(111) and Cl/Si(100). Variance in LEELS spectra shows that decomposition of SiClx (x > 1), a small amount of which was present on Cl/Si(111), occurs under heating on Si(111) both in UHV and in Cl2 and desorbs reaction products, leaving the Si---Cl bonds on the surfaces. Such Si---Cl bonds specific to those on Cl/Si(111) are formed also on Cl/Si(100) heated in C12 at 820°C. On Cl/Si(100) heated in C12, there are various surface changes: relaxation of the 2 × 1 structure remaining on the Cl/Si(100), desorption of reaction products, and formation of Si---Cl bonds specific to those on Cl/Si(111). The Si---Cl bonds, both on Cl/Si(111) and Cl/Si(100), decomposed under longer heating and under heating at higher temperatures in UHV. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|