Interlayer exchange coupling in ferromagnet-semiconductor digital magnetic alloys

The interlayer exchange coupling in ferromagnet-semiconductor digital magnetic alloys in which monolyers (submonolayers) of transition metals are embedded into a semiconductor matrix is studied theoretically. A mechanism of an indirect exchange between ferromagnetic δ layers is proposed; it is based on the confinement of carriers in two-dimensional spin-polarized states inside the energy gap of the semiconductor. These appear due to strong potential and exchange carrier scattering by the δ layers. The interlayer exchange coupling is shown to occur through a nondegenerate semiconductor interlayer because of virtual electron excitations through an energy barrier separating these partly filled two-dimensional spin-polarized states and the edge of the bulk semiconductor band. The interlayer coupling intensity decreases exponentially with increasing distance between neighboring δ layers, and the type of this coupling can change from ferromagnetic into antiferromagnetic or vice versa as the interlayer thickness or the degree of filling the two-dimensional states increases.