Wannier-Stark resonances under strong localization conditions in natural silicon-carbide superlattices

A detailed experimental investigation is made of the electronic transport under conditions of Wannier-Stark localization of carriers in a natural superlattice of hexagonal polytypes of silicon carbide. The 4H and 6H polytypes, which possess different superlattice and miniband spectrum parameters, are employed. Direct measurements of the electronic current versus the average electric field in the active region of the sample revealed a series of regions of negative differential conductivity in fields ranging from 500 to 2100 kV/cm. Analysis of the results shows that the observed current resonances are associated with the development of the Wannier-Stark quantization process and are due to conduction mechanisms such as hopping conduction, induced between the levels of a Wannier-Stark ladder by a resonant electron-phonon interaction, and the resonant interminiband tunneling from the first into the second miniband. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 2, 105–109 (25 July 1996)