| 电磁脉冲作用下PIN二极管的响应 |
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| 引用本文： | 李勇,宣春,谢海燕,夏洪富,王建国.电磁脉冲作用下PIN二极管的响应[J].强激光与粒子束,2013,25(8):2061-2066. |
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| 作者姓名： | 李勇 宣春 谢海燕 夏洪富 王建国 |
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| 作者单位： | 1.西北核技术研究所, 西安 71 0024; |
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| 摘 要： | 采用自主开发的二维半导体器件效应模拟软件,对电磁脉冲作用下PIN二极管的响应进行了数值模拟研究，分析了PIN管在脉冲电压上升沿时间内出现的电流过冲现象。结果表明:过冲电流与高频下PIN二极管的电容性有关，过冲电流的峰值与上升沿时间有关，上升沿时间越短，峰值越大；PIN管的掺杂也会对过冲电流产生影响，P层、N层的掺杂浓度越高，过冲电流的峰值越大，过冲电流的波形下降越快；I层掺杂浓度对过冲电流也有一定影响，但并不显著。
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| 关 键 词： | 电磁脉冲 PIN二极管 过冲电流 限幅器 |
| 收稿时间： | 2012-10-19; |
Response of PIN diode to electromagnetic pulse |
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| Li Yong,Xuan Chun,Xie Haiyan,Xia Hongfu,Wang Jianguo.Response of PIN diode to electromagnetic pulse[J].High Power Laser and Particle Beams,2013,25(8):2061-2066. |
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| Authors: | Li Yong Xuan Chun Xie Haiyan Xia Hongfu Wang Jianguo |
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| Institution: | 1.Northwest Institute of Nuclear Technology,Xi’an 710024,China; 2.School of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China |
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| Abstract: | To study the effect of PIN diode limiter under electromagnetic pulse (EMP), the response of PIN diode is numerically simulated by using self-developed 2D semiconductor device simulation software. Current overshoot phenomena of PIN diode during the rise time of EMP are analyzed. Overshoot current is validated to be due to the capacitive performance of PIN diode under high frequency. Shorter rise time of EMP causes higher peak of current. Overshoot current is affected by doping concentration of PIN diode. The higher doping concentration of the P layer and N layer causes higher peak of current and sooner attenuation of overshoot current. The doping concentration of the I layer also affects the overshoot current, but not as the salient as concentration of the P and N layers. |
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| Keywords: | PIN diode overshoot current limiter |
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