4H-SiC肖特基二极管的电荷收集特性

针对极端环境下耐辐照半导体核探测器的研制需求，采用耐高温、耐辐照的4H碳化硅(4H-SiC)宽禁带材料制成肖特基二极管，研究了该探测器对241Am源粒子的电荷收集效率。从电容-电压曲线得出该二极管外延层净掺杂数密度为1.991015/cm3。从正向电流-电压曲线获得该二极管肖特基势垒高度为1.66 eV，理想因子为1.07，表明该探测器具备良好的热电子发射特性。在反向偏压高达700 V时，该二极管未击穿，其漏电流仅为21 nA，具有较高的击穿电压。在反向偏压为0~350 V范围内研究了该探测器对3.5 MeV 粒子电荷收集效率，在0 V时为48.7%，在150 V时为99.4%，表明该探测器具有良好的电荷收集特性。

Charge collection properties of a 4H-SiC Schottky diode

A Schottky barrier diode was made using 4H-SiC wide band gap material, both radiation resistance and temperature resistance of which are excellent due to its intrinsic properties. The charge collection properties of the 4H-SiC Schottky barrier diode were investigated by irradiating the diode with alpha particles from ²⁴¹Am source. The net dopant concentration, 1.99×10¹⁵/cm³, are inferred from the capacitane-voltage curve. From the current-voltage curve, the barrier height and the ideality factor are found to be 1.66 eV and 1.07, respectively, indicating the main current transportation process of the diode is thermal electron emission. Under the reverse bias at 700 V, the diode has a leakage current of 21 nA, exhibiting a relatively high breakdown voltage. The charge collection properties of the diode to 3.5 MeV alpha particles were investigated at the reverse bias in the range of 0-350 V. The values of charge collection efficiency at 0 V and 150 V are 48.7% and 99.4%, respectively, indicating excellent charge collection properties of 4H-SiC Schottky diode.