| 脉冲激光沉积法制备的Pb(Zr0.4Ti0.6)O3铁电薄膜漏电机理 |
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| 引用本文： | 陈剑辉,刘保亭,孙杰,霍骥川,赵敬伟,王玉强,赵庆勋.脉冲激光沉积法制备的Pb(Zr0.4Ti0.6)O3铁电薄膜漏电机理[J].河北大学学报(自然科学版),2009,29(5):474. |
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| 作者姓名： | 陈剑辉 刘保亭 孙杰 霍骥川 赵敬伟 王玉强 赵庆勋 |
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| 作者单位： | 河北大学物理科学与技术学院,河北保定,071002 |
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| 基金项目： | 国家自然科学基金资助项目，河北省自然科学基金资助项目，教育部科学技术研究重点项目，河北省应用基础研究计划重点项目 |
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| 摘 要： | 利用准分子脉冲激光器在Pt/Ti/SiO2/Si(111)衬底上制备了Pb(Zr0.4Ti0.6)O3(PZT)铁电薄膜.利用掩膜技术,采用磁控溅射法在PZT薄膜上生长Pt上电极,构架了Pt/PZT/Pt铁电电容器异质结.采用X射线衍射和电容耦合测试技术分别表征了PZT铁电薄膜的微结构和电学性能.研究发现:在5 V的测试电压下,在560℃较低的沉积温度下生长的PZT薄膜电容器的剩余极化强度为187 C/m2、矫顽电压为2.0 V、漏电流密度为2.5×10-5A/cm2.应用数学拟合的方法研究了Pt/PZT/Pt的漏电机理,发现当电压小于1.22 V时,Pt/PZT/Pt电容器对应欧姆导电机理;当电压大于2.30 V时,对应非线性的界面肖特基传导(Schottky emission)机理.
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| 关 键 词： | Pb(Zr0.4Ti0.6)O3 漏电机理 铁电薄膜 脉冲激光沉积 |
Pb(Zr_(0.4)Ti_(0.6))O_3 Ferroelectric Thin Films Prepared by PLD Technique and Its Leakage Mechanism |
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| CHEN Jian-hui,LIU Bao-ting,SUN Jie,HUO Ji-chuan,ZHAO Jing-wei,WANG Yu-qiang,ZHAO qin-xun.Pb(Zr_(0.4)Ti_(0.6))O_3 Ferroelectric Thin Films Prepared by PLD Technique and Its Leakage Mechanism[J].Journal of Hebei University (Natural Science Edition),2009,29(5):474. |
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| Authors: | CHEN Jian-hui LIU Bao-ting SUN Jie HUO Ji-chuan ZHAO Jing-wei WANG Yu-qiang ZHAO qin-xun |
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| Institution: | College of Physics Science and Technology;Hebei University;Baoding 071002;China |
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| Abstract: | Pb(ZrxTi1-x)O3(PZT) ferroelectric thin film was deposited on Pt/Ti/SiO2/Si(111) substrates by the pulsed laser deposition(PLD),Pt film was sputtered as top electrode by RF-sputtering method using a shadow mask to obtain Pt/PZT/Pt ferroelectric capacitor heterostructures.The microstructural and electrical properties of PZT thin film were investigated by X-ray diffraction(XRD) and capacitive coupling technology,respectively.It was found that remnant polarization,coercive voltage and leakage current density of... |
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| Keywords: | Pb(Zr0 4Ti0 6)O3 |
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