金属量子结构中的半导体输运性质及其调控

随着后摩尔时代的推进,以硅为基础的半导体器件正接近其性能极限.除了不断引入新的器件结构外,设计具有半导体特性的金属量子结构为微电子器件的性能提升提供了全新的解决方案;而打开金属带隙,使其具有栅极可调半导体输运,是实现其应用的关键.以此为目的,自20世纪末以来,多种金属量子结构便逐步被设计与开发,其输运特性的有效调控也被学术界广泛研究.本文回顾了零维量子点、一维纳米线/纳米管、二维材料/人工二维晶格/超导薄膜等不同维度金属量子结构的研究进展;针对这些结构体系,介绍了其各自的能隙调控思想,总结分析了可控输运特性的实现方法与内在机制,对比展示了材料结构的电学性能及应用前景.基于目前报道的研究结果,提出了未来预期的研究方向:开发金属量子结构中输运与自旋关联特性,设计同时传输电荷与自旋信息,且具有栅极可调输运带隙的全金属沟道材料、结构与器件.

Semiconducting transport characteristics and their regulation in metal quantum structures

The silicon-based semiconductor industry is approaching its performance limit with the development in the post-Moore era.Along with the introduction of new device configurations,the design of metal quantum structures with semiconductor characteristics provides new alternatives for improving the performance of microelectronic devices.Reallife applications can be realized by opening their bandgaps and achieving gate-controllable semiconducting transport.Therefore,various metal quantum structures have been designed and developed since the end of the previous century.Further,effective control of their transport characteristics has been widely studied.In this paper,we review the research progress of metal quantum structures having different dimensions,including zero-dimensional quantum dots,onedimensional nanowires/nanotubes,and two-dimensional materials/artificial lattices/superconducting films.Given the above structural systems,we introduce concepts to modify their energy gaps,analyze the realization methods and internal mechanisms of the controllable transport characteristics,and identify the electrical properties and application prospects of materials and structures.Furthermore,based on recent research progress,future research directions are proposed,including the development of the transport and spin correlation characteristics of metal quantum structures and the design of all-metallic channel materials,structures,and devices that can simultaneously transmit charge and spin information with a gate-controllable transport bandgap.