High anisotropy of the field-effect transistor mobility in magnetically aligned discotic liquid-crystalline semiconductors |
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Authors: | Shklyarevskiy Igor O Jonkheijm Pascal Stutzmann Natalie Wasserberg Dorothee Wondergem Harry J Christianen Peter C M Schenning Albertus P H J de Leeuw Dago M Tomović Zeljko Wu Jishan Müllen Klaus Maan Jan C |
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Institution: | High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands. |
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Abstract: | A magnetic field has been utilized for producing highly oriented films of a substituted hexabenzocoronene (HBC). Optical microscopy studies revealed large area HBC monodomains that covered the entire film, while wide-angle X-ray measurements showed that the HBC molecules are aligned with their planes along the applied field. On the basis of this method, solution-processed field-effect transistors (FET) have been constructed with charge carrier mobilities of up to 10(-3) cm2/V.s, which are significantly enhanced with respect to the unaligned material. Exceptionally high mobility anisotropies of 25-75 for current flow parallel and perpendicular to the alignment direction have been measured as a function of the channel length. Atomic force microscopy performed on the FET structures reveals fibril superstructures that are oriented perpendicularly to the magnetic field direction, consisting of molecular columns with a slippage angle of 40 degrees between the molecules. For channel lengths larger than 2.5 mum, the fibrils are smaller than the electrode spacing, which adversely affects the device performance. |
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