| 几种新型的光电器件 |
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| 引用本文： | 张佐兰.几种新型的光电器件[J].半导体光电,1994,15(1):28-35. |
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| 作者姓名： | 张佐兰 |
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| 作者单位： | 东南大学 |
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| 摘 要： | 描述用ＳＯＩ技术制造的光耦合ＭＯＳ继电器和多量子阱长波和红外探测器，以及集成异质结晶体管和激光二管于一体的高增益，高灵敏的光电子开关器件，文中着重介绍这些器件的结构，制造工和器件特性，并对其进行了讨论。
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| 关 键 词： | 红外探测器 多量子阱 光电器件 |
Novel Optoelectronic Devices |
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| Zhang Zuolan.Novel Optoelectronic Devices[J].Semiconductor Optoelectronics,1994,15(1):28-35. |
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| Authors: | Zhang Zuolan |
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| Institution: | Shoutheast University.Nanjing 210008 |
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| Abstract: | This paper describes some newly developed optoelectronic devices such as optical coupling MOS relays made by SOI technology,multiple quantum-well(MQW) longwavelength infrared(LWIR) detectors,and high gain and sensitive photonic swithing devices integrating heterojunction phototransistors with laser diodes.The structures,fabrication technology and characteristics of these devices are presented. |
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| Keywords: | Infrared Detection Multiquantum-well SOI Technology MOS Relay |
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