| 1.8—4.2K GaAs1-xPx注N+,注Zn+光荧光谱 |
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| 引用本文： | 徐俊英,陈良惠,弓继书,徐仲英,庄蔚华,李玉璋,许继宗,吴灵犀.1.8—4.2K GaAs1-xPx注N+,注Zn+光荧光谱[J].物理学报,1984,33(6):833-839. |
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| 作者姓名： | 徐俊英 陈良惠 弓继书 徐仲英 庄蔚华 李玉璋 许继宗 吴灵犀 |
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| 作者单位： | 中国科学院半导体研究所 |
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| 摘 要： | 本文研究了1.8—4.2K下离子注N,注ZnGaAs1-xPx样品的光致发光行为。实验结果表明由N-Zn跃迁完全转变到N束缚激子复合的x值依赖N,Zn的浓度。利用Campbell局域化模型计算了N-Zn跃迁与N束缚激子复合的几率比。这一几率比是组分x和N-Zn浓度的函数。在1.8K,在同一样品上我们清晰地观测到对应N-Zn跃迁与N束缚激子复合的光谱。
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| 收稿时间： | 1983-06-30 |
THE PHOTOLUMINESCENCE SPECTRA OF N+, Zn+ IMPLANTED GaAs1-xPx AT 1.8-4.2 K |
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| XU JUN-YING,CHEN LIANG-HUI,GONG JI-SHU,XU ZHONG-YING,ZHUANG WEI-HUA,LI YU-ZHANG,XU JI-ZONG and WU LING-XI.THE PHOTOLUMINESCENCE SPECTRA OF N+, Zn+ IMPLANTED GaAs1-xPx AT 1.8-4.2 K[J].Acta Physica Sinica,1984,33(6):833-839. |
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| Authors: | XU JUN-YING CHEN LIANG-HUI GONG JI-SHU XU ZHONG-YING ZHUANG WEI-HUA LI YU-ZHANG XU JI-ZONG and WU LING-XI |
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| Abstract: | The photoluminescent behavior of N+ and Zn+ implanted GaAs1-xPx has been investigated at 4.2 K. The experimental results show that the alloy composition x, at which N-Zn transition completely becomes N bound excitonic recombination, depends on the nitrogen and zinc impurity concentration.Using Campbell localized model, we calculated the probability ratio of N-Zn transition to N bound excitonic recombination as a function of composition and N, Zn impurity concentration.At 1.8 K, we have clearly observed the typical spectra of N-Zn transition and N bound excitonic recombination in the same sample. |
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