45kHz,2kV电光调制电路的设计与应用 |
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引用本文: | 陈伟,梁昊,廖胜凯,徐昱,彭承志. 45kHz,2kV电光调制电路的设计与应用[J]. 强激光与粒子束, 2015, 27(8): 085001. DOI: 10.11884/HPLPB201527.085001 |
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作者姓名: | 陈伟 梁昊 廖胜凯 徐昱 彭承志 |
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作者单位: | 1.中国科学技术大学 近代物理系 核探测与核电子学国家重点实验室, 安徽省物理电子学重点实验室, 合肥 230026; |
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摘 要: | 根据差分相移量子密钥分发实验对高速电光调制电路的需求,利用固体开关技术和变压器隔离技术,设计出了重复频率为45kHz、输出脉冲电压达到2kV的电光调制电路,该电光调制电路由两部分组成,正负1kV高压脉冲产生电路,其中正1kV高压脉冲的上升沿为50.44ns,下降沿为44.6ns,负1kV高压脉冲下降沿为52.29ns,上升沿为50.44ns。普克尔盒调制电路与光路进行联调,光路的消光比达到23dB,完全满足了消光比为20dB的实验需求。
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关 键 词: | 电光调制电路 功率MOSFET 差分相移量子密钥分 高压脉冲 |
收稿时间: | 2015-03-31 |
Design and application of 45 kHz, 2 kV electro-optic modulator |
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Abstract: | According to the DPS-QKD (differential phase shift quantum key distribution) experiment demand for high-speed electro-optic modulator, the solid state switching technology and transformer isolation technology were applied to the design of a high speed electro optic modulator with a repetition rate of 45 kHz and a pulse of 2 kV. The modulation circuit includes two parts which can generate negative and positive 1000 V high voltage pulses respectively. The rise time and fall time of the positive high voltage pulse are 50.44 ns and 44.6 ns, and those of the negative high voltage pulses are 52.29 ns and 50.44 ns. The extinction ration is up to 23 dB when the modulator modulates the Pockels cell, which completely satisfies the need of DPS-QKD experiment. |
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