Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structure |
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| Affiliation: | 1. Department of Nano-electronic Engineering, University of Science & Technology, Daejeon 305-350, Republic of Korea;2. Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;3. Spin Convergence Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea |
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| Abstract: | Full zinc-blende structure GaAs nanowire grown by a catalyst-free method is reported with As pulse injection in the initial growth time. When As is injected by a pulse while maintaining Ga injection, high Ga supersaturation could easily form nanowire nucleation for the seed formation. Then, continuous GaAs injection contributes to GaAs nanowire growth for increasing length. The GaAs nanowire could grow further with 3.7-μm length and 120-nm diameter. GaAs nanowires were measured by transmission electron microscopy analysis. |
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| Keywords: | Nanostructures Crystal growth Epitaxial growth Transmission electron microscopy (TEM) Crystal structure Catalytic properties |
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