Nonreciprocal scattering by stacked nonlinear magneto-active semiconductor layers |
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| Institution: | 1. Univ. Paris-Sud, Institut d’Electronique Fondamentale, UMR 8622, 91405 Orsay Cedex, France;2. CNRS, Orsay F-91405, France;3. Laboratoire Charles Fabry, IOGS, CNRS, Univ. Paris-Sud, 2 Ave A. Fresnel, 91127 Palaiseau Cedex, France;1. Department of Physics, Harbin Institute of Technology, Harbin 150001, China;2. Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin 150001, China;1. Institute of Electronic Structure and Laser, Foundation for Research and Technology, Hellas (FORTH), P.O. Box 1385, Heraklion, Crete, Greece;2. Department of Materials Science and Technology, University of Crete, Greece;3. Physics Department, University of Crete, Greece;4. Ames Lab and Department of Physics and Astronomy, Iowa State University, Ames, IA, USA |
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| Abstract: | The combinatorial frequency generation by the periodic stacks of magnetically biased semiconductor layers has been modelled in a self-consistent problem formulation, taking into account the nonlinear dynamics of carriers. It is shown that magnetic bias not only renders nonreciprocity of the three-wave mixing process but also significantly enhances the nonlinear interactions in the stacks, especially at the frequencies close to the intrinsic magneto-plasma resonances of the constituent layers. The main mechanisms and properties of the combinatorial frequency generation and emission from the stacks are illustrated by the simulation results, and the effects of the individual layer parameters and the structure arrangement on the stack nonlinear and nonreciprocal response are discussed. |
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| Keywords: | Semiconductor Magnetic field Periodic structure Weak nonlinearity Three-wave interaction Combinatorial frequency generation |
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