Fabrication of a planar water gated organic field effect transistor using a hydrophilic polythiophene for improved digital inverter performance |
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Institution: | 1. Physics Department, Western Michigan University, Kalamazoo, MI 49008, USA;2. Chemistry Departments, Western Michigan University, Kalamazoo, MI 49008, USA;3. Chemical Engineering & Applied Chemistry, University of Toronto, 200 College Street Toronto, Ontario, M5S 3E5, Canada |
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Abstract: | A planar water gated OFET (WG-OFET) structure is fabricated by patterning gate, source and drain electrodes on the same plane at the same time. Transistor output characteristics of this novel structure employing commercial regioregular poly(3-hexylthiophene) (rr-P3HT) as polymer semiconductor and deionized (DI) water as gate dielectric show successful field effect transistor operation with an on–off current ratio of 43 A/A and transconductance of 2.5 μA/V. These output characteristics are improved using P3HT functionalized with poly(ethylene glycol) (PEG) (P3HT-co-P3PEGT), which is more hydrophilic, leading to on–off ratio of 130 A/A and transconductance of 3.9 μA/V. Utilization of 100 mM NaCl solution instead of DI water significantly increases the on–off ratio to 141 A/A and transconductance to 7.17 μA/V for commercial P3HT and to 217 A/A and to 11.9 μA/V for P3HT-co-P3PEGT. Finally, transistors with improved transconductances are used to build digital inverters with improved characteristics. Gain of the inverters employing P3HT and P3HT-co-P3PEGT are measured as 2.9 V/V and 10.3 V/V, respectively, with 100 mM NaCl solution. |
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Keywords: | Water gated organic field effect transistor Planar gate electrode Polythiophene (P3HT) functionalized with poly(ethylene glycol)(PEG) Hydrophilic semiconductor polymer Transconductance of OFET Gain of digital inverter |
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