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Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substrates |
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| Affiliation: | 1. Department of Electrical and Communication Engineering, Hanyang University, Ansan, Republic of Korea;2. IV Works Co., Ltd., Ansan, Republic of Korea;3. Department of Physics, Chungnam National University, Daejeon, Republic of Korea |
| Abstract: | |
| Keywords: | Gallium nitride Molecular beam epitaxy V/III ratio Defect annihilation |
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