Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks

High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si_0.75Ge_0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si_0.75Ge_0.25 channels, HfSiO₂ high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 10¹⁰), and gate leakage current (～10^?2A/cm² at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si_0.75Ge_0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ～100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si_0.75Ge_0.25 channels, which are major causes of the high off-state current of small band gap energy Si_0.75Ge_0.25 pMOSFETs, by improving gate control over the channel.