Improving the electrical performance of HfInZnO-TFTs by introducing a thin ITO interlayer |
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| Institution: | 1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People''s Republic of China;2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People''s Republic of China |
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| Abstract: | We have fabricated hafnium–indium–zinc-oxide (HfInZnO) thin film transistors (TFT) with indium–tin-oxide (ITO) interlayer. Compared with conventional HfInZnO-TFT, the electrical performance and bias stability of HfInZnO-TFTs with ITO interlayer are improved. HfInZnO-TFT with 4-nm-thick ITO interlayer shows a high mobility of 7.2 cm2/V s, a low threshold voltage of 0.13 V and a better bias stability. The performance enhancement is attributed to a decrease in interface trap state and an increase in carrier concentration. It suggests that introducing ITO interlayer at the ALD Al2O3/HfInZnO interface is an effective way to improve the electrical performance and bias stability. |
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| Keywords: | ITO interlayer HfInZnO-TFT Bias stability |
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