Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film transistors |
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| Institution: | 1. College of Physics Science, Qingdao University, Qingdao 266071, China;2. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;3. Electronic Ceramics Center, DongEui University, Busan 614-714, Republic of Korea;4. College of Chemical Science and Engineering, Qingdao University, Qingdao 266071, China |
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| Abstract: | In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrOx) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrOx layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrOx dielectric is a promising gate dielectric candidate for high-performance oxide devices. |
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| Keywords: | Thin-film transistor In–Ti–Zn–O thin film |
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