Strain evolution and morphological transition of magnetron-sputtered CeO2 thin films induced by deposition parameters |
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| Institution: | 1. Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084, China;2. Division of Advanced Manufacturing, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China;3. Department of Mechanical Engineering, Tsinghua University, Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084, China;4. Shenzhen Key Laboratory of LED Packaging, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China |
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| Abstract: | Cerium dioxide (CeO2) films were fabricated on yttria-stabilized zirconia (YSZ) single crystals using unbalanced radio frequency (RF) magnetron sputtering. X-ray diffraction measurements revealed film strain discrepancies under different deposition parameters. Strain evolution was induced by varying sputtering pressure, RF power, and sputtering gas. A distinct morphological transition from a granular surface to an interwoven surface was also realized by varying the above parameters. On the basis of the “atomic peening” mechanism, the influence of different parameters on film strain was discussed. The film surface characteristics were revealed to be highly correlated with film strain. YBa2Cu3O7−δ (YBCO) films were post-deposited on the as-grown CeO2/YSZ(001) stack by using the trifluoroacetate metal-organic deposition (TFA-MOD) method. The superconducting property of the YBCO layer varied significantly with the morphology of the CeO2 buffer films. |
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| Keywords: | Cerium dioxide Strain Morphology Atomic peening |
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