Very facile fabrication of aligned organic nanowires based high-performance top-gate transistors on flexible,transparent substrate

Aligned single-crystalline organic nanowires (NWs) show promising applications in flexible and stretchable electronics, while the use of pre-existing aligned techniques and well-developed photolithography techniques are impeded by the large incompatibility with organic materials and flexible substrates. In this work, aligned copper phthalocyanine (CuPc) organic NWs were grown on flexible and transparent poly(dimethylsiloxane) (PDMS) substrate via a grating-assisted growth approach. Furthermore, a simple yet efficient etching-assisted transfer printing (ETP) method was used to achieve CuPc NW array-based flexible top-gate organic field-effect transistors (OFETs) with a high mobility up to 2.0 cm² V^?1 s^?1, a small operating voltage within ±10 V, a high on/off ratio >10⁴, and excellent bend stability with bending radius down to 3 mm. It is expected that the high-performance organic NW array-based top-gate OFETs with exceeding bend stability will have important applications in future flexible electronics.