Transition metal oxides on organic semiconductors |
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| Affiliation: | 1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore;3. Department of Physics, Department of Electrical and Electronics Engineering, and UNAM−Institute of Materials Science and Nanotechnology, Bilkent University, TR-06800 Ankara, Turkey;4. South University of Science and Technology, Shenzhen, Guangdong 518055, China;1. Soft Innovative Materials Research Center, Korea Institute of Science and Technology, Eunhari san 101, Bongdong-eup, Wanju-gun, Jeonbuk 565-905, Republic of Korea;2. Interface Control Research Center, Future Convergence Research Division, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791, Republic of Korea;3. Department of Metallurgy and Materials Engineering, KU Leuven, 3001 Leuven, Belgium;1. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083, PR China;2. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA;1. Department of Electronics, Sardar Patel University, Vallabh Vidyanagar, 388 120, Anand, Gujarat, India;2. Department of Physics (Retd. Professor), Sardar Patel University, Vallabh Vidyanagar, 388 120, Anand, Gujarat, India;1. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;2. Engineering Research Centre of Advanced Glasses Manufacturing Technology, Ministry of Education, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China |
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| Abstract: | Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar cells (OSCs), which can improve the stability of such devices as a result of improved protection of air sensitive cathode. However, most of these reports are focused on the anode modification effect of TMO and the nature of TMO-on-OS is not fully understood. Here we show that the OS on TMO forms a two-layer structure, where the interface mixing is minimized, while for TMO-on-OS, due to the obvious diffusion of TMO into the OS, a doping-layer structure is formed. This is evidenced by a series of optical and electrical studies. By studying the TMO diffusion depth in different OS, we found that this process is governed by the thermal property of the OS. The TMO tends to diffuse deeper into the OS with a lower evaporation temperature. It is shown that the TMO can diffuse more than 20 nm into the OS, depending on the thermal property of the OS. We also show that the TMO-on-OS structure can replace the commonly used OS with TMO doping structure, which is a big step toward in simplifying the fabrication process of the organic optoelectronic devices. |
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| Keywords: | p-doping Transition metal oxide Organic semiconductor Diffusion Organic light-emitting diode |
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