Temperature and pressure behaviour of narrow-gap semiconductors including galena |
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Affiliation: | High Pressure Research Lab., Department of Physics, Barkatullah University, Bhopal 462026, India |
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Abstract: | The structural high pressure and temperature investigation of narrow-gap semiconductors (lead chalcogenides) has been performed in the present article. A realistic approach for room temperature and high temperature study of narrow-gap semiconductors has been used. It is examined that the present compounds are more stable in NaCl-phase and they transform to CsCl-phase at high pressure. In the present article, the phase transition pressures and volume collapses of lead chalcogenides have been investigated at room and high temperatures. Phase transition pressures have been reported at high temperature range from 0 to 1200 K. Elastic and anharmonic constants have also been reported at room temperature. A structural study of the narrow-gap semiconductors have been carried out using the realistic model including temperature effect. The temperature and pressure behaviour of elastic constants for the present compounds have also been discussed. Furthermore, various mechanical and thermo dynamical properties like modulus of elasticity, Debye temperatures etc. are also presented. |
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Keywords: | Semiconductors High pressure Phase transitions Elastic properties |
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