用于脉冲γ强度测量的φ60,1000μm PIN探测器

采用电阻率为10000—20000 Ω·cm的高阻单晶硅材料，研制成功灵敏区尺寸为φ60 mm，耗尽层厚度～1000　μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统，对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析，结果表明，这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要. 关键词： 大面积 电流型 半导体探测器

φ60,1000 μm Si-PIN Detectors for pulsed γ flux measurement

Using high-resistivity (10000—20000 Ω·cm) n-type Si wafers,we have developed φ60 PIN semiconductor detector with depletion thickness ～1000 microns for low-intensity pulsed γ-ray flux measurement.For determination of thickness of the depletion depths, a recoil proton chamber with 20° scattering angle has been constructed.The detector's performance have been measured and analyzed,which indicates that the developed detector satisfactorily meets the expected specifications.Compared with the existing detectors with depletion depths of 200—300 microns,the detector has much greater γ detecting sensitivity and suited for measuring pulsed γ-ray flux in low-intensity mixed γ/n fields.