应变Si价带色散关系模型

基于K.P理论框架，通过引入应变哈密顿微扰项，详细推导并建立了应变Si的价带色散关系模型.所得模型适用于任意晶向弛豫Si_1－xGe_x(0≤x≤0.6)衬底上生长的应变Si，并且，通过该模型可以获取任意K矢方向的应变Si价带结构及空穴有效质量，对器件研究设计可提供有价值的参考.关键词：应变SiK.P理论色散关系

Dispersion relation model of valence band in strained Si

There has been much interest lately in the strained Si CMOS technology used for carrier mobility enhancement. The dispersion relation of valence band in strained Si is the theoretical basis for understanding and enhancing hole mobility. With in the frame of K.P theory, the dispersion relation is derived by taking strained Hamiltonian perturbation into account. The corresponding model obtained can be applied to calculate the valence band structure and hole effective mass along arbitrarily K wavevector direction in strained Si grown on arbitrarily oriented relaxed Si_1－xGe_x(0≤x≤0.6) substrates, and hence is valuable as reference for the design of devices.