氮化镓基发光二极管产业化中的材料物理问题

第三代半导体氮化镓化合物半导体已成为蓝光发光二极管的主流材料，国际上的产业化已成规模，国内也有多家处于中试阶段，由于氮化镓基材料中有如此多的问题没有解决，材料制备设备，器件工艺也极需改进及优化，这既给了中国科研人员及工程技术人员一个机遇，也使他们面临着严峻的挑战。

MATERIAL PHYSICS PROBLEMS IN THE MASS PRODUCTION OF GaN BASED LED

The GaN based semiconductor, as the third generation of semiconductors, has been the main focus for blue light emitting diodes. Its production abroad has been greatly expanded but has only just started in China. In fact, scientists and engineers have to solve many problems and difficulties related to GaN based materials growth, device structure design and optimization of device processing, including modification of the MOCVD equipment to satisfy the requirements of high quality mass production. This is a great opportunity and challenge to the scientists and engineers in China.