| 用MOVPE方法外延生长Si掺杂的立方相GaN |
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| 引用本文： | WU Jun,ZHAO F H,Ito Y. 用MOVPE方法外延生长Si掺杂的立方相GaN[J]. 发光学报, 2001, 22(Z1): 1-4 |
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| 作者姓名： | WU Jun ZHAO F H Ito Y |
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| 作者单位： | Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku,,Yokohama R D Laboratory, The Furukawa Electric Co. Ltd., 2-4-3 Okano, Nishi-ku,,Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, |
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| 摘 要： | 用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN.在生长了一个20nm厚的缓冲层后,外延生长了1μm厚的立方GaN外延层.利用二次离子质谱测定了掺杂的程度.并用X射线衍射和光致发光测量来表征了未掺杂和Si掺杂GaN的结构和光学质量.
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| 关 键 词： | Si掺杂GaN MOVPE 光致发光特性 |
| 文章编号： | 1000-7032(2001)增-0001-04 |
| 修稿时间： | 2001-03-17 |
Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy |
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| WU Jun,ZHAO F H,Ito Y,Yoshida S,Onabe K,Shiraki Y. Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy[J]. Chinese Journal of Luminescence, 2001, 22(Z1): 1-4 |
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| Authors: | WU Jun ZHAO F H Ito Y Yoshida S Onabe K Shiraki Y |
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| Abstract: | Si-doped and undoped cubic GaN were grown by low-pressure metalorganic vapor phase epitaxy using a two-step growth process. After the deposition of a 20nm-thick buffer layer, an about 1μm-thick Si-doped cubic GaN epitaxial layer was deposited. Doping level was determined by secondary ion mass spectroscopy measurements. X-ray diffraction and photoluminescence measurements were used to characterize the structural and optical quality of the undoped and the Si-doped cubic GaN. |
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