| 半导体硅片的电化学研究(英文) |
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| 引用本文： | 程璇,林昌健.半导体硅片的电化学研究(英文)[J].电化学,2000,6(3):258-264. |
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| 作者姓名： | 程璇 林昌健 |
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| 作者单位： | 厦门大学化学系!材料科学系,固体表面物理化学国家重点实验室,福建厦门361005,厦门大学化学系!材料科学系,固体表面物理化学国家重点实验室,福建厦门361005 |
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| 基金项目： | 教育部留学回国人员科研启动基金;; |
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| 摘 要： | 采用电化学直流极化和交流阻抗技术 ,在有光照和黑暗条件下分别研究了半导体硅片在稀释氢氟酸溶液中的电化学特性 .两种电化学技术均对溶液中含有的微量铜 (1 0 - 9wt % -浓度水平 )非常敏感 ,但仅对溶液中的 1 0 - 6 wt % -浓度水平的非离子型表面活性剂敏感 .结果表明 ,有光照条件下在硅 /溶液界面上极易发生电化学反应 ,且该反应对硅表面性质起主导作用 .
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| 关 键 词： | 极化电阻 铜沉积 硅片/溶液界面 |
| 收稿时间： | 2000-08-28 |
Electrochemical Investigations of Semiconductor Silicon Wafers |
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| CHENG Xuan,LIN Chang-jian.Electrochemical Investigations of Semiconductor Silicon Wafers[J].Electrochemistry,2000,6(3):258-264. |
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| Authors: | CHENG Xuan LIN Chang-jian |
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| Abstract: | Electrochemical characteristics of semiconductor silicon wafers were investigated in dilute hydrofluoric acid solutions using DC polarization and AC impedance techniques under both illuminated and dark conditions. Both techniques were extremely sensitive to the trace amount (10 -9 wt% level) of copper presented in solutions, but only sensitive to the 10 -6 wt% level of non ionic surfactant OHS contained in solutions. The results revealed that the electrochemical reactions took place favorably and became predominated at silicon/solution interface under illuminated condition. |
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| Keywords: | Polarization Resistance Copper contamination Silicon/solution interface |
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