Synthesis of GaP nanowires with Ga2O3 coating

Zinc-blende-type face centred cubic structure GaP nanowires with Ga₂O₃ coating were synthesized by heating Ga₂O₃ and red phosphorus powder with the assistance of NH₃ and Ar at 1323 K. The GaP/Ga₂O₃ nanowires have a uniform size distribution with diameters ranging from tens of nm to hundreds of nm and lengths up to several micrometres. The inner GaP nanowires have almost a single-crystal structure with twin defects and have the 111 direction as preferential growth direction. Outer Ga₂O₃ layers were polycrystalline and acted as a protection layer for the inner GaP nanowires to permit their use at high temperature. The GaP/Ga₂O₃ structure may have potential applications in future nanodevice design. PACS 81.07.Bc; 81.16.Pr