The factors contributing to the band gap bowing of the dilute nitride GaNP alloy |
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| Authors: | Chuan-Zhen Zhao Tong Wei Xiao-Dong Sun Sha-Sha Wang Ke-Qing Lu |
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| Institution: | 1. School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China
2. College of Science, Civil Aviation University of China, Tianjin, 300300, China
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| Abstract: | The factors contributing to the band gap bowing of the dilute nitride GaNP are analyzed. It is found that the band gap bowing is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum of GaP. The other is the coupling interaction between the N level and the X conduction band minimum of GaP. We also estimate the band gap reduction due to each factor. It is found that the band gap bowing is mainly due to the coupling interaction between the N level and the Γ conduction band minimum of GaP. |
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