Interphase microstress measurements in IN 718 by cold neutron diffraction |
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Authors: | J Repper P Link M Hofmann C Krempaszky W Petry E Werner |
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Institution: | 1. School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou, 215021, China
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Abstract: | The linear energy–momentum relation results in more high-energy electrons in 2D (two-dimensional) graphene FETs (field-effect
transistor) than those in silicon FETs that features parabolic energy–momentum relation if the same surface electron density
has been assumed in all FETs. The numerical calculations demonstrate that, under such assumption, the gate leakage currents
in graphene FETs are much larger than that in silicon FETs. The results illustrate that if the conduction band offset between
graphene and gate oxide is lower than 3.55 eV, the gate leakage currents in graphene electronics are more significant than
those in the silicon electronics. |
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Keywords: | |
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