Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation |
| |
Authors: | Yoonho Khang and Joohyun Lee |
| |
Institution: | (1) Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, 446-711, Korea;(2) Samsung Advanced Institute of Technology, Yongin, 446-712, Korea |
| |
Abstract: | We synthesized Si nanoparticles by pulsed nanosecond-laser ablation. We applied a positive voltage bias during laser irradiation
and effectively reduced size distribution. Scanning electron micrographs of samples showed the nanoparticles to be highly
non-agglomerated. Si nanoparticles have the average diameter of 4–5 nm, the geometrical standard deviation of 1.35, and the
density of 1.6 × 1012/cm2. A MOS device showed excellent charge trap behavior with a flat-band voltage shift over 7 V, which can be applied for memory
device applications. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|