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Phase transition in thin epitaxial ferroelectric films as derived from thermal measurements |
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| Authors: | S. T. Davitadze B. A. Strukov D. V. Vysotskiĭ V. V. Lemanov S. G. Shul’man Y. Uesu S. Asanuma |
| Affiliation: | (1) Faculty of Physics, Moscow State University, Moscow, 119992, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(3) Waseda University, 1-104 Totsukamachi, Shinjuku-ku, Tokyo 169-8050, Japan |
| Abstract: | The temperature dependence of the heat capacity of thin epitaxial films BaTiO3/MgO is studied by the dynamic 3ω method in the thickness range 50–500 nm. It is revealed that the heat capacity exhibits diffuse anomalies due to phase transitions. The temperature of the ferroelectric phase transition T C increases with decreasing film thickness. The reasons for the strong diffuseness of the transition and the nonlinear dependence of the transition temperature on the film thickness are discussed. |
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