| GaAs1-xPx中3d过渡金属杂质的电子结构 |
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| 引用本文： | 顾一鸣,黄明竹,汪克林. GaAs1-xPx中3d过渡金属杂质的电子结构[J]. 物理学报, 1988, 37(1): 11-19 |
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| 作者姓名： | 顾一鸣 黄明竹 汪克林 |
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| 作者单位： | 中国科学技术大学物理系 |
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| 摘 要： | 本文推广了Vogl等人的理论方法,将其用于对GaAs1-xPx中3d过渡金属杂质电子结构的研究。文中就不同的合金成份x,预言了不同3d杂质的受主能级、施主能级、局域电荷和自旋密度。理论预言与实验数据符合,并且揭示了它们的主要化学趋势。文中还就与理论和实验结果变化趋势有关的物理机制进行了讨论。关键词：
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| 收稿时间： | 1987-03-06 |
ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM |
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| GU YI-MING,HUANG MING-ZHU and WANG KE LING. ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM[J]. Acta Physica Sinica, 1988, 37(1): 11-19 |
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| Authors: | GU YI-MING HUANG MING-ZHU WANG KE LING |
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| Abstract: | The theory proposed by P. Vogl ct al. is extended to the 3d-transition metal impurities doped GaAs1-xPx alloy system. For different compositions, i.e. different x, the acceptor levels, donor levels, local charges and spin-densities of different 3d impurities are predicted. The theory agrees well with the relevant experimental data and reveals their major chemical trends. The physical mechanisms which are responsible for the variation trends of theoretical and experimental results are also discussed. |
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