Laser-induced down-conversion parameters of singly and doubly doped ZnS phosphors |
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| Authors: | H S Bhatti Rajesh Sharma N K Verma |
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| Institution: | (1) Department of Physics, Punjabi University, 147 002 Patiala, India;(2) Institute of Engineering and Emerging Technologies, Baddi, Dist, 173 205 Solan, India;(3) SPMS, Thapar Institute of Engineering and Technology, 147 004 Patiala, India |
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| Abstract: | Singly and doubly doped ZnS phosphors have been synthesized using flux method. Laser-induced photoluminescence has been observed
in ZnS-doped phosphors when these were excited by the pulsed UV N2 laser radiation. Due to down-conversion phenomenon, fast phosphorescence emission in the visible region is recorded in milliseconds
time domain for ZnS:Mn while in the case of ZnS:Mn:killer (Fe, Co and Ni) the lifetime reduces to microseconds time domain.
Experimentally observed luminescent emission parameters of excited states such as, lifetimes, trap-depth values and decay
constants have been reported here at room temperature. The high efficiency and fast recombination times observed in doped
ZnS phosphors make these materials very attractive for optoelectronic applications. |
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| Keywords: | UV laser excitation quencher impurities excited state lifetimes laserinduced photoluminescence |
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