| Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure |
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| 作者姓名： | Chen Zhiming Ren Ping Pu Hongbin |
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| 作者单位： | 西安理工大学电子工程系,西安 710048;西安理工大学电子工程系,西安 710048;西安理工大学电子工程系,西安 710048 |
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| 基金项目： | 中国科学院资助项目
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广东省博士启动基金 |
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| 摘 要： | 针对抗电磁干扰的需要提出了一种由SiCGe/3C-SiC异质结构成的光控达林顿晶体管设计.用多维器件模拟软件ISE对这种新型功率开关进行了特性仿真.结果表明,与采用其他结晶类型的碳化硅衬底相比,SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能,可使其最大共射极电流增益达到890,获得最好的光触发特性和较好的Ⅰ-Ⅴ特性,饱和压降大约为4V.
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| 关 键 词： | SiCGe SiC 异质结 达林顿晶体管 SiCGe SiC hetero-junction Darlington transistor SiCGe 异质结 光控达林顿晶体管 设计与仿真 Based Darlington Transistor Simulation performance simulation device good characteristics voltage knee maximum common emitter current gain design benefits |
| 文章编号： | 0253-4177(2006)02-0254-04 |
| 收稿时间： | 09 20 2005 12:00AM |
| 修稿时间： | 2005年9月20日 |
Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure |
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| Chen Zhiming,Ren Ping,Pu Hongbin.Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure[J].Chinese Journal of Semiconductors,2006,27(2):254-257. |
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| Authors: | Chen Zhiming Ren Ping and Pu Hongbin |
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| Abstract: | A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI(electromagnetic interference) applications.The performance of the novel power switch is simulated using ISE.In comparison with the switches based on other polytypes of SiC,the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC.A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable.The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V. |
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| Keywords: | SiCGe SiC hetero-junction Darlington transistor |
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