Electrical conductivity and band structure of thin polycrystalline EuS films

A study of the electrical resistance of thin polycrystalline EuS films (0.4–0.8 μm thick) in the temperature range 120–480 K has provided the basis for a model of the band structure of this substance. It has been shown that the main impurity levels in thin polycrystalline EuS films are those related with localized states near the conduction band bottom, as well as the E _i donor levels of Eu ions outside regular lattice sites. The “tail” of the localized states extends in energy up to at least ?0.45 eV.