Defect levels in the band gap of amorphous selenium |
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Authors: | ML Benkhedir MS Aida |
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Institution: | a Laboratorium voor Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium b Université Mentouri, Laboratoire de Physique des Matériaux, Constantine 25000, Algeria |
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Abstract: | Energy locations in the band gap have been determined for the thermally accessible levels of the negative-U defect centers in amorphous selenium. Both the temperature dependence of the steady-state photocurrents, and an analysis of emission currents in the post-transit regime of a time-of-flight transient photoconductivity experiment on the same samples, agree on the presence of defect levels at (0.42 ± 0.04) eV above the valence band mobility edge and (0.53 ± 0.06) eV below the conduction band. Both measured current levels and the resolved energy positions of the defects are subject to the Poole-Frenkel effect. |
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Keywords: | A200 C145 D108 D140 D180 |
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