Use of electron irradiation in studying thermal donors in silicon by the EPR method

The bistable thermal donors in Czochralski-grown silicon crystals were investigated by EPR spectroscopy and IR-absorption techniques. It is shown that using heat treatment at a temperature ≤400°C and appropriate conductivity compensation by irradiation with 3.5 MeV electrons, one can select from the total signal the EPR-signal associated with only one type, namely TDD2, of the thermal donors. Based on the model of a two-center core structure of the given complexes, an explanation of the EPR-spectroscopy data on the oxygen thermal donors in silicon is suggested. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 188–191, March–April, 2000.