Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering |
| |
Authors: | Hai-Qin Huang Feng-Juan Liu Jian Sun Jian-Wei Zhao Zuo-Fu Hu Zhen-Jun Li Xi-Qing Zhang |
| |
Affiliation: | Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opto-electronic Technology, Beijing Jiaotong University, Beijing 100044, China |
| |
Abstract: | We report on the electrical properties of bottom-gate ZnO thin film transistors (TFTs) with different active layer thicknesses. The ZnO active layer films with thickness varied from 20 to 100 nm were deposited by radio frequency (rf) magnetron sputtering on SiO2/p-Si substrate and annealed at a high temperature of 950 °C. The transistor with 40 nm thick ZnO exhibited the best performance, with a field effect mobility of 27.5 cm2/V s, a threshold voltage of −2.4 V and an on/off ratio of 7×103. |
| |
Keywords: | A. Inorganic compounds A. Oxides D. Electrical properties |
本文献已被 ScienceDirect 等数据库收录! |