4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror |
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Authors: | He Jing-Liang Fan Ya-Xian Du Juan Wang Yong-Gang Liu Sheng Wang Hui-Tian Zhang Lian-Han Hang Yin |
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Institution: | National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China. |
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Abstract: | We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. |
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